2023
C. -K. (Hank) Chen, Z. Xu, S. Hooda, J. Pan, E. Zamburg and A. V. -Y. Thean, “Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs,” 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4, https://doi.org/10.1109/IEDM45741.2023.10413688
Z. Xu, C. -K. (Hank) Chen, H. L. Lin, Y. Gao, W. Ke, B. Xu, D. Pavel, A. Carlan, E. Zamburg and A. V. -Y. Thean, “First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic Systems,” 2023 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2023, pp. 1-4, https://doi.org/10.1109/IEDM45741.2023.10413812
J. F. Leong, Z. Fang, M. Sivan, J. Pan, B. Tang, E. Zamburg, A. V. Thean, “N-P Reconfigurable Dual-Mode Memtransistors for Compact Bio-Inspired Feature Extractor with Inhibitory-Excitatory Spiking Capability”. Adv. Funct. Mater. 2023, 33, 2302949. https://doi.org/10.1002/adfm.202302949
C. -K. (Hank) Chen, S. Hooda, Z. Fang, M. Lal, Z. Xu, J. Pan, S.-H. Tsai, E. Zamburg and A. V. -Y. Thean et al., “High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect,” in IEEE Transactions on Electron Devices (Invited to special issues), vol. 70, no. 4, pp. 2098-2105, https://doi.org/10.1109/TED.2023.3242633
Yifei Luo, Mohammad Reza Abidian, Jong-Hyun Ahn, Deji Akinwande, Anne M. Andrews, Markus Antonietti, Zhenan Bao, Magnus Berggren, Christopher A. Berkey, Christopher John Bettinger, Jun Chen, Peng Chen, Wenlong Cheng, Xu Cheng, Seon-Jin Choi, Alex Chortos, Canan Dagdeviren, Reinhold H. Dauskardt, Chong-an Di, Michael D. Dickey, Xiangfeng Duan, Antonio Facchetti, Zhiyong Fan, Yin Fang, Jianyou Feng, Xue Feng, Huajian Gao, Wei Gao, Xiwen Gong, Chuan Fei Guo, Xiaojun Guo, Martin C. Hartel, Zihan He, John S. Ho, Youfan Hu, Qiyao Huang, Yu Huang, Fengwei Huo, Muhammad M. Hussain, Ali Javey, Unyong Jeong, Chen Jiang, Xingyu Jiang, Jiheong Kang, Daniil Karnaushenko, Ali Khademhosseini, Dae-Hyeong Kim, Il-Doo Kim, Dmitry Kireev, Lingxuan Kong, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Lee, Fengyu Li, Jinxing Li, Cuiyuan Liang, Chwee Teck Lim, Yuanjing Lin, Darren J. Lipomi, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Liu, Xian Jun Loh, Nanshu Lu, Zhisheng Lv, Shlomo Magdassi, George G. Malliaras, Naoji Matsuhisa, Arokia Nathan, Simiao Niu, Jieming Pan, Changhyun Pang, Qibing Pei, Huisheng Peng, Dianpeng Qi, Huaying Ren, John A. Rogers, Aaron Rowe, Oliver G. Schmidt, Tsuyoshi Sekitani, Dae-Gyo Seo, Guozhen Shen, Xing Sheng, Qiongfeng Shi, Takao Someya, Yanlin Song, Eleni Stavrinidou, Meng Su, Xuemei Sun, Kuniharu Takei, Xiao-Ming Tao, Benjamin C. K. Tee, Aaron Voon-Yew Thean, Tran Quang Trung, Changjin Wan, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Wang, Paul S. Weiss, Hanqi Wen, Sheng Xu, Tailin Xu, Hongping Yan, Xuzhou Yan, Hui Yang, Le Yang, Shuaijian Yang, Lan Yin, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Yu, Evgeny Zamburg, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhang, Siyuan Zhao, Xuanhe Zhao, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zheng, Tao Zhou, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zhu, Guijin Zou, and Xiaodong Chen, “Technology Roadmap for Flexible Sensors”, ACS Nano 2023, 17, 6, 5211–5295 (IF=18), https://doi.org/10.1021/acsnano.2c12606
2022
Zefeng Xu, Baoshan Tang, Xiangyu Zhang, Jin Feng Leong, Jieming Pan, Sonu Hooda, Evgeny Zamburg, Aaron Voon-Yew Thean, “Reconfigurable nonlinear photonic activation function for photonic neural network based on non-volatile opto-resistive RAM switch”, Light: science & applications 11, 288 (2022). https://doi.org/10.1038/s41377-022-00976-5
Shih-Hao Tsai, Zihang Fang, Xinghua Wang, Umesh Chand, Chun-Kuei Chen, Sonu Hooda, Maheswari Sivan, Jieming Pan, Evgeny Zamburg, and Aaron Voon-Yew Thean, “Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor”,ACS Appl. Electron. Mater. 2022, 4, 4, 1642–1650, https://doi.org/10.1021/acsaelm.1c01321
M Sivan, JF Leong, J Ghosh, B Tang, J Pan, E Zamburg, AVY Thean, “Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability,” ACS Nano 2022, 16, 9, 14308–14322.. (IF=18.03) https://doi.org/10.1021/acsnano.2c04504
J Pan, Z Yang, SHK Yap, X Zhang, Z Xu, Y Li, Y Luo, E Zamburg, EX Liu, …, “Non-destructive online seal integrity inspection utilizing autoencoder-based electrical capacitance tomography for product packaging assurance,” Food Packaging and Shelf Life 33, 100919. (IF=6.42) https://doi.org/10.1016/j.fpsl.2022.100919
SHK Yap, J Pan, DV Linh, X Zhang, X Wang, WZ Teo, E Zamburg, …,”Engineered Nucleotide Chemicapacitive Microsensor Array Augmented with Physics‐Guided Machine Learning for High‐Throughput Screening of Cannabidiol,” Small, 2107659 (IF=15.15) https://doi.org/10.1002/smll.202107659
B Tang, H Veluri, Y Li, ZG Yu, M Waqar, JF Leong, M Sivan, E Zamburg, …,”Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing,” Nature Communications 13 (1), 1-9, 2002. (IF=17.69) https://doi.org/10.1038/s41467-022-30519-w
2022
(Keynote/Distinguished Speaker) Aaron Thean, “Materials-Device-System Co-Design for Analog-Non-Volatile-Memory-Based In-Memory Computing for Edge-AI,” Distinguished speaker at IBM IEEE CAS/EDS – AI Compute Symposium at IBM Yorktown Heights, New York, USA 12 -13 October 2022 (https://www.zurich.ibm.com/thinklab/AIcomputesymposium.html)
(Keynote/Distinguished Speaker) Aaron Thean, “Materials-Device-System Co-Design for Analog-Non-Volatile-Memory-Based In-Memory Computing for Edge-AI,” IEEE International Workshop for Future Intelligent Circuits and Systems (IW-FICAS) 2022, Singaore. https://ewh.ieee.org/r10/singapore/cas/workshops.html
(Invited Speaker) Aaron Thean, ” Materials Engineering of Oxide Semiconductors and 2D Materials for Novel Memory-Centric 3D-Integrated Circuits,’ Invited Speaker, Session TuA2 Formation and Characterization of Nanostructures I,Tuesday, September 6, 2022, TuA2-1 (Time: 10:40 – 11:10 JST), ISCSI-IX, 9th International Symposium on Control of Semiconductor Interfaces, September 5 (Mon.) - 8 (Thu.), 2022, Nagoya University, Nagoya, Japan, http://iscsi9.org/
2021
(Keynote/Distinguished Speaker) Aaron Thean, “Low-Thermal Budget Functional Material and their Application to EnhanceFlexible and Beyond Electronics,” KAUST Research Open Week, with the theme of Sustainability: Science for the Future., Nov28-Dec 2 2021, https://researchopenweek.kaust.edu.sa/speakers
(Keynote/Distinguished Speaker) Aaron Thean, “Low-Thermal Budget Functional Material and their Application to Enhance Flexible and Beyond Electronics,” International Conference on Flexible and Printed Electronics (ICFPE) 2021, https://www.eng.niigata-u.ac.jp/~icfpe/files/ProgramPlenary.pdf
(Keynote/Distinguished Speaker) Aaron Thean, “What’s wrong with my chip? – Dr. AI, can you please diagnose?,” IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IEEE IPFA 2021, Singapore, https://ipfa-ieee.org/2021/speaker-tag/Keynote/
WO WO2022124993A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2020-12-11 • Filed 2021-12-10 • Published 2022-06-16
A memory device for deep neural network, DNN, accelerators, a method of fabricating a memory device for deep neural network, DNN, accelerators, a method of convoluting a kernel [A] with an input feature map [B] in a memory device for a deep neural network, DNN, accelerator, a memory device for a …
WO WO2021107884A1 Aaron Voon-Yew THEAN National University Of Singapore
Priority 2019-11-28 • Filed 2020-11-27 • Published 2021-06-03
A pressure sensor and a method of sensing pressure using the pressure sensor. the pressure sensor comprises a sensor element array, each sensor element comprising two opposing electrode elements; and a porous mat disposed between the two opposing electrode elements of the sensor element; wherein …
WO WO2021040617A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2019-08-23 • Filed 2020-08-21 • Published 2021-03-04
Disclosed is a wearable body (100) comprising (i) one or more electrodes (102) positioned at a location at which a non- contact gesture, performed by a wearer when wearing the wearable body, is detectable by the sensor device, (ii) an excitation source (104) for supplying an excitation signal to …
WO WO2021029825A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2019-08-15 • Filed 2020-08-06 • Published 2021-02-18
A method and system for integrity testing of packages. The method comprises the steps of disposing at least a portion of the package relative to a multi-electrodes structure, the multi-electrodes structure comprising at least first and second arrays of electrodes; applying an AC bias voltage to …
WO WO2020046207A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2018-08-31 • Filed 2019-08-28 • Published 2020-03-05
A method and system for integrity testing of a blister package. The method comprises the steps of providing an electrode structure comprising at least one pair of electrodes; disposing a blister of the blister package relative to the electrode structure such that the blister is subjectable to an …
WO WO2020027727A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2018-07-30 • Filed 2019-07-29 • Published 2020-02-06
A method and system for integrity testing of cup packages. The method comprises the steps of disposing at least a portion of a seal area of the cup package relative to an electrode structure; applying an AC bias voltage to the electrode structure; measuring an electrical property of the portion of …
WO US CN SG WO2019209180A1 Voon Yew Aaron THEAN National University Of Singapore
Priority 2018-04-27 • Filed 2019-04-24 • Published 2019-10-31
A method and system for integrity testing of sachets. The method comprises the steps of disposing at least a portion of the sachet relative to an electrode structure; applying an AC bias voltage to the electrode structure; measuring an electrical property of the portion of the sachet over a …