Publications

Selected journal articles, reviews and flagship conference papers, arranged by publication year.

2026

Wan, S. Zhao, B. Tang, Z. G. Yu, Z. Fang, J. F. Leong, Z. Xu, Y.-W. Zhang, E. Zamburg and A. V.-Y. Thean, “Light Polarization-Based Electro-Optic Memory,” Nature Communications, 2026. Published 2 July 2026. doi.org/10.1038/s41467-026-75086-6

Li, Z. Xu, Y. Chen, C. Zeng, J. Yang, J. F. Leong, M. Sivan, B. Tang, Z. Wang, Y. Gao, H.-L. Lin, A. K. Mugilvannan, E. Zamburg, A. Danner, C.-W. Qiu, G. Eda and A. V.-Y. Thean, “Opto-Optical Edge Defect Mitigation in Solution-Processed WSe2 Thin Films for High-Efficiency Optical Modulation,” Nature Communications, vol. 17, article 7185, 2026. doi.org/10.1038/s41467-026-73576-1

2025

Yang, Z. Xu, C. Zeng, J. F. Leong, E. Zamburg and A. V.-Y. Thean, “High-Q Lithium Niobate Microrings Enabled by a Hybrid Dry Etching and Wet Polishing Technique,” CLEO 2025, Technical Digest Series, Optica Publishing Group, paper JPS200_46, 2025. doi.org/10.1364/CLEO_AT.2025.JPS200_46

Tang, X. Chen, R. Wan, Z. G. Yu, S. Hooda, W. Wang, Z. Fang, Q. Wan, M. Sivan, E. Zamburg, Y.-W. Zhang, X. Gong and A. V.-Y. Thean, “First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability (|Delta VTH| < 44 mV) at an Elevated Temperature (395 K),” 2025 Symposium on VLSI Technology and Circuits, Kyoto, Japan, pp. 1-3, 2025. doi.org/10.23919/VLSITechnologyandCir65189.2025.11075017

Zhao, Z. Xu, J. Yang, Y. Li, E. Zamburg, R. Nagarajan and A. V.-Y. Thean, “A 2-Transistor-1-Modulator (2T1M) Electronic-Photonic Hybrid Memory Architecture for Deep Neural Network CIM and Very Large-Scale Transformers,” 2025 Symposium on VLSI Technology and Circuits, Kyoto, Japan, pp. 1-3, 2025. doi.org/10.23919/VLSITechnologyandCir65189.2025.11075020

F. Leong, M. Sivan, J. Pan, Z. Fang, J. Li, Z. Xu, S. Zhao, Q. Wan, E. Zamburg and A. V.-Y. Thean, “Opportunities for 2D-Material-Based Multifunctional Devices and Systems in Bioinspired Neural Networks,” Small, article e06638, 2025. doi.org/10.1002/smll.202506638

Yang, A. Yan, J. F. Leong, C. Zeng, J. Pan, S. Zhao, G. Zhang, Z. Xu, B. Xu, T. Yu, X. Cheng, S. Hooda, E. Zamburg, B. C.-K. Tee and A. V.-Y. Thean, “Heterogeneous Integration of Performant Lithium Niobate-on-Silicon Micro-Ring Modulator by High-Precision Micro-Transfer Printing,” 2025 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 1-4, 2025. doi.org/10.1109/IEDM50572.2025.11353731

Xing, B. Tang, S. Zhao, Q. Wan, J. F. Leong, Q. Nie, Y. Zhou, Z. Hong, E. Zamburg, W. Sun, D. Yang and A. V.-Y. Thean, “Tunable Volatile and Nonvolatile Switching in Silicon Nanosheets Memristor Array for Reservoir Computing,” Device, vol. 3, no. 9, article 100905, 2025. doi.org/10.1016/j.device.2025.100905

Xu, C.-K. Chen, H.-L. Lin, M. Sivan, E. Zamburg, J. Y.-M. Lee, S. Venkatesan, A. Danner and A. V.-Y. Thean, “Ferroelectric-Based Pockels Photonic Memory,” Nature Communications, vol. 16, article 8329, 2025. doi.org/10.1038/s41467-025-63850-z

Ji, B. Tang, J. Wang, H. Zheng, Z. Weng, Y. Wu, S. Li, A. V.-Y. Thean and K.-W. Ang, “High-Speed and Low-Energy Resistive Switching with Two-Dimensional Cobalt Phosphorus Trisulfide for Efficient Neuromorphic Computing,” ACS Nano, vol. 19, no. 1, pp. 722-735, 2025. doi.org/10.1021/acsnano.4c11890

Liu, H. Guo, Y. J. Tan, K. Yu, Q. Guan, E. Zamburg, W. Cheng, X. Wang, L. Zhou, H. Chen, Y. Jin, X. Cheng, F.-C. Liang, B. Tang, H. P. A. Ali, J. Yang, C. He, Y. Cai, A. V.-Y. Thean, Z. L. Wang and B. C. K. Tee, “Recyclable Self-Secreting Autonomous Healing Dielectrics for Millisecond Water Quality Sensing,” Nature Communications, vol. 16, article 5524, 2025. doi.org/10.1038/s41467-025-59973-y

Zhao, Y. Li, J. Pan, E. Zamburg and A. V.-Y. Thean, “In-Memory Subnet Computation for Area and Energy Efficient AI,” AI4X 2025 Conference, Singapore, 8-11 July 2025. openreview.net/forum?id=n1JeKxsB8Y

Li, Z. Xu, Y. Chen, J. F. Leong, M. Sivan, E. Zamburg, C.-W. Qiu, G. Eda and A. V.-Y. Thean, “Electrically Tunable Edge Defects for Electro-Optic Modulation in WSe2,” 2025 IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, paper 4.18, 2025.

2024

Tang, Z. Fang, R. Wan, S. Hooda, J. F. Leong, Q. Wan, C.-K. Chen, E. Zamburg, J.-S. Kim and A. V.-Y. Thean, “1T1R and 2T0C1R IGZO-MoS2 All-BEOL 3D Memory Cells,” 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 1-4, 2024. doi.org/10.1109/IEDM50854.2024.10873575

Tang, M. Sivan, J. F. Leong, Z. Xu, Y. Zhang, J. Li, R. Wan, Q. Wan, E. Zamburg and A. V.-Y. Thean, “Solution-Processable 2D Materials for Monolithic 3D Memory-Sensing-Computing Platforms: Opportunities and Challenges,” npj 2D Materials and Applications, vol. 8, article 74, 2024. doi.org/10.1038/s41699-024-00508-2

Zhang, X. T. Zheng, X. Zhang, J. Pan and A. V.-Y. Thean, “Hybrid Integration of Wearable Devices for Physiological Monitoring,” Chemical Reviews, vol. 124, no. 18, pp. 10386-10434, 2024. doi.org/10.1021/acs.chemrev.3c00471

Ghosh, “Efficient Machine Learning-Assisted Failure Analysis Method for Circuit-Level Defect Prediction,” Machine Learning with Applications, vol. 16, article 100537, 2024. doi.org/10.1016/j.mlwa.2024.100537

Jani, J. Harrison, S. Hooda, S. Prakash, P. Nandi, J. Hu, Z. Zeng, J.-C. Lin, C. Godfrey, G. J. Omar, T. A. Butcher, J. Raabe, S. Finizio, A. V.-Y. Thean, A. Ariando and P. G. Radaelli, “Spatially Reconfigurable Antiferromagnetic States in Topologically Rich Free-Standing Nanomembranes,” Nature Materials, vol. 23, no. 5, pp. 619-626, 2024. doi.org/10.1038/s41563-024-01806-2

2023

C.-K. Chen, Z. Xu, S. Hooda, J. Pan, E. Zamburg and A. V.-Y. Thean, “Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal-Budget IGZO TFT and FeFETs,” 2023 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 1-4, 2023. doi.org/10.1109/IEDM45741.2023.10413688

Xu, C.-K. Chen, H.-L. Lin, Y. Gao, W. Ke, B. Xu, P. Dmitriev, C. Arbiz, E. Zamburg and A. V.-Y. Thean, “First Demonstration of HZO-LNOI Integrated Ferroelectric Electro-Optic Modulator and Memory to Enable Reconfigurable Photonic Systems,” 2023 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp. 1-4, 2023. doi.org/10.1109/IEDM45741.2023.10413812

F. Leong, Z. Fang, M. Sivan, J. Pan, B. Tang, E. Zamburg and A. V.-Y. Thean, “N-P Reconfigurable Dual-Mode Memtransistors for Compact Bio-Inspired Feature Extractor with Inhibitory-Excitatory Spiking Capability,” Advanced Functional Materials, vol. 33, no. 45, article 2302949, 2023. doi.org/10.1002/adfm.202302949

C.-K. Chen, S. Hooda, Z. Fang, M. Lal, Z. Xu, J. Pan, S.-H. Tsai, E. Zamburg and A. V.-Y. Thean, “High-Performance Top-Gated and Double-Gated Oxide-Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect,” IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2098-2105, 2023. doi.org/10.1109/TED.2023.3242633

Luo et al., including A. V.-Y. Thean, “Technology Roadmap for Flexible Sensors,” ACS Nano, vol. 17, no. 6, pp. 5211-5295, 2023. doi.org/10.1021/acsnano.2c12606

Liu, Y. Wen, C. F. Siah, M. E. Pam, B. Xu, A. V.-Y. Thean, Y. K. Lim and S. Shin, “A Dual-Domain 3omega Method for Measuring the In-Plane Thermal Conductivity of High-Conductive Thin Films,” Applied Physics Letters, vol. 122, no. 25, 2023. doi.org/10.1063/5.0154177

C. K. Goh, C. F. Siah, B. Xu, Y. Zhang, M. E. Pam, E. Guevarra, E. S. P. Goh, et al., including A. V.-Y. Thean, “Multi-Axial Elastic Averaging for Sub-Micron Passive Alignment of Photonic Components,” Journal of Lightwave Technology, vol. 41, no. 12, pp. 3986-3992, 2023. doi.org/10.1109/JLT.2023.3279319

2022

Thean, S.-H. Tsai, C.-K. Chen, M. Sivan, B. Tang, S. Hooda, Z. Fang, J. Pan, J. F. Leong, H. Veluri and E. Zamburg, “Low-Thermal-Budget BEOL-Compatible Beyond-Silicon Transistor Technologies for Future Monolithic-3D Compute and Memory Applications,” 2022 IEEE International Electron Devices Meeting (IEDM), pp. 12.2.1-12.2.4, 2022. doi.org/10.1109/IEDM45625.2022.10019511

C.-K. Chen, Z. Fang, S. Hooda, M. Lal, U. Chand, Z. Xu, J. Pan, S.-H. Tsai, E. Zamburg and A. V.-Y. Thean, “First Demonstration of Ultra-Low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect,” 2022 IEEE International Electron Devices Meeting (IEDM), pp. 6.1.1-6.1.4, 2022. doi.org/10.1109/IEDM45625.2022.10019440

Xu, B. Tang, X. Zhang, J. F. Leong, J. Pan, S. Hooda, E. Zamburg and A. V.-Y. Thean, “Reconfigurable Nonlinear Photonic Activation Function for Photonic Neural Network Based on Non-Volatile Opto-Resistive RAM Switch,” Light: Science & Applications, vol. 11, article 288, 2022. doi.org/10.1038/s41377-022-00976-5

S.-H. Tsai, Z. Fang, X. Wang, U. Chand, C.-K. Chen, S. Hooda, M. Sivan, J. Pan, E. Zamburg and A. V.-Y. Thean, “Stress-Memorized HZO for High-Performance Ferroelectric Field-Effect Memtransistor,” ACS Applied Electronic Materials, vol. 4, no. 4, pp. 1642-1650, 2022. doi.org/10.1021/acsaelm.1c01321

Sivan, J. F. Leong, J. Ghosh, B. Tang, J. Pan, E. Zamburg and A. V.-Y. Thean, “Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability,” ACS Nano, vol. 16, no. 9, pp. 14308-14319, 2022. doi.org/10.1021/acsnano.2c04504

Tang, H. Veluri, Y. Li, Z. G. Yu, M. Waqar, J. F. Leong, M. Sivan, E. Zamburg, et al., including A. V.-Y. Thean, “Wafer-Scale Solution-Processed 2D Material Analog Resistive Memory Array for Memory-Based Computing,” Nature Communications, vol. 13, article 3037, 2022. doi.org/10.1038/s41467-022-30519-w

Pan, Z. Yang, S. H. K. Yap, X. Zhang, Z. Xu, Y. Li, Y. Luo, E. Zamburg, et al., “Non-Destructive Online Seal Integrity Inspection Utilizing Autoencoder-Based Electrical Capacitance Tomography for Product Packaging Assurance,” Food Packaging and Shelf Life, vol. 33, article 100919, 2022. doi.org/10.1016/j.fpsl.2022.100919

H. K. Yap, J. Pan, D. V. Linh, X. Zhang, X. Wang, W. Z. Teo, E. Zamburg, et al., “Engineered Nucleotide Chemicapacitive Microsensor Array Augmented with Physics-Guided Machine Learning for High-Throughput Screening of Cannabidiol,” Small, vol. 18, no. 22, article 2107659, 2022. doi.org/10.1002/smll.202107659

2021

Pan, Y. Li, Y. Luo, X. Zhang, X. Wang, D. L. T. Wong, C. H. Heng, C. K. Tham, et al., including A. V.-Y. Thean, “Hybrid-Flexible Bimodal Sensing Wearable Glove System for Complex Hand Gesture Recognition,” ACS Sensors, vol. 6, no. 11, pp. 4156-4166, 2021. doi.org/10.1021/acssensors.1c01698

Veluri, Y. Li, J. X. Niu, E. Zamburg and A. V.-Y. Thean, “High-Throughput, Area-Efficient, and Variation-Tolerant 3-D In-Memory Compute System for Deep Convolutional Neural Networks,” IEEE Internet of Things Journal, vol. 8, no. 11, pp. 9219-9232, 2021. doi.org/10.1109/JIOT.2021.3058015

Pan, K. L. Low, J. Ghosh, S. Jayavelu, M. M. Ferdaus, S. Y. Lim, E. Zamburg, Y. Li, B. Tang, X. Wang, J. F. Leong, S. Ramasamy, T. Buonassisi, C. K. Tham and A. V.-Y. Thean, “Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors,” ACS Applied Nano Materials, vol. 4, no. 7, pp. 6903-6915, 2021. doi.org/10.1021/acsanm.1c00960

Han, Q. Kong, Y. Kang, C. Sun, C. Wang, J. Zhang, H. Xu, S. Samanta, J. Zhou, H. Wang, A. V.-Y. Thean and X. Gong, “Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors,” IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6610-6616, 2021. doi.org/10.1109/TED.2021.3113893

Samanta, K. Han, C. Sun, C. Wang, A. Kumar, A. V.-Y. Thean and X. Gong, “Amorphous InGaZnO Thin-Film Transistors with Sub-10-nm Channel Thickness and Ultrascaled Channel Length,” IEEE Transactions on Electron Devices, vol. 68, no. 3, pp. 1050-1056, 2021. doi.org/10.1109/TED.2020.3048920

Liao, W. Song, X. Zhang, H. Jin, S. Liu, Y. Wang, A. V.-Y. Thean and Y. Zheng, “An Artificial Peripheral Neural System Based on Highly Stretchable and Integrated Multifunctional Sensors,” Advanced Functional Materials, vol. 31, no. 24, article 2101107, 2021. doi.org/10.1002/adfm.202101107

Chand, Z. Fang, C.-K. Chen, Y. Luo, H. Veluri, M. Sivan, J. F. Leong, et al., including A. V.-Y. Thean, “2-kbit Array of 3-D Monolithically-Stacked IGZO FETs with Low SS, Ultra-Low Leakage, Competitive Mobility and Novel nMOS-Only Circuit Demonstration,” 2021 Symposium on VLSI Technology, pp. 1-2, 2021.